Dry polishing of silicon is widely used when manufacturing memory and microcontrollers for mobile devices, where the chips have to be very thin.
This section explains the special characteristics of grinding and dry polishing silicon wafers.
After grinding
Size: Φ8in
Thickness: 50 µm
Grinding wheel: #2000
Ball-on-ring test is an easy method to assess the effects of processing onto the back side of the chip. When the strengths of a wafer that has only its back surface ground and a wafer that is both ground and dry-polished are compared by ball-on-ring test, the wafer that is ground and polished is shown to have higher die strength. This improvement in die strength is attributed to the elimination of grinding damage during polishing.
Below is an image of a silicon wafer after dry polishing.
Wafer diameter: Φ300 mm, Final thickness: 50 µm
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